Photoluminescence model of sulfur passivated p-InP nanowires
Identifieur interne : 001321 ( Main/Exploration ); précédent : 001320; suivant : 001322Photoluminescence model of sulfur passivated p-InP nanowires
Auteurs : N. Tajik [Canada] ; C M Haapamaki [Canada] ; R R Lapierre [Canada]Source :
- Nanotechnology [ 0957-4484 ] ; 2012-08-10.
Abstract
The effect of ammonium polysulfide solution, (NH4)2Sx, on the surface passivation of p-doped InP nanowires (NWs) was investigated by micro-photoluminescence. An improvement in photoluminescence (PL) intensity from individual NWs upon passivation was used to optimize the passivation procedure using different solvents, sulfur concentrations and durations of passivation. The optimized passivation procedure gave an average of 24 times improvement in peak PL intensity. A numerical model is presented to explain the PL improvement upon passivation in terms of a reduction in surface trap density by two orders of magnitude from 1012 to 1010cm2, corresponding to a change in surface recombination velocity from 106 to 104cms1. The diameter dependence of the PL intensity is investigated and explained by the model. The PL intensity from passivated nanowires decreased to its initial (pre-passivation) value over a period of seven days in ambient air, indicating that the S passivation was unstable.
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DOI: 10.1088/0957-4484/23/31/315703
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Tajik</name></author><author><name sortKey="Haapamaki, C M" sort="Haapamaki, C M" uniqKey="Haapamaki C" first="C M" last="Haapamaki">C M Haapamaki</name></author><author><name sortKey="Lapierre, R R" sort="Lapierre, R R" uniqKey="Lapierre R" first="R R" last="Lapierre">R R Lapierre</name></author></titleStmt><publicationStmt><idno type="wicri:source">ISTEX</idno><idno type="RBID">ISTEX:7917A3A45DC7ED1623FF247FDB9E2FE832432E8B</idno><date when="2012" year="2012">2012</date><idno type="doi">10.1088/0957-4484/23/31/315703</idno><idno type="url">https://api-v5.istex.fr/document/7917A3A45DC7ED1623FF247FDB9E2FE832432E8B/fulltext/pdf</idno><idno type="wicri:Area/Istex/Corpus">000928</idno><idno type="wicri:explorRef" wicri:stream="Istex" wicri:step="Corpus" wicri:corpus="ISTEX">000928</idno><idno type="wicri:Area/Istex/Curation">000928</idno><idno type="wicri:Area/Istex/Checkpoint">000168</idno><idno type="wicri:explorRef" wicri:stream="Istex" wicri:step="Checkpoint">000168</idno><idno type="wicri:doubleKey">0957-4484:2012:Tajik N:photoluminescence:model:of</idno><idno type="wicri:Area/Main/Merge">001353</idno><idno type="wicri:Area/Main/Curation">001321</idno><idno type="wicri:Area/Main/Exploration">001321</idno></publicationStmt><sourceDesc><biblStruct><analytic><title level="a">Photoluminescence model of sulfur passivated p-InP nanowires</title><author><name sortKey="Tajik, N" sort="Tajik, N" uniqKey="Tajik N" first="N" last="Tajik">N. Tajik</name><affiliation wicri:level="4"><country xml:lang="fr">Canada</country><wicri:regionArea>Department of Engineering Physics, Centre for Emerging Device Technologies, McMaster University, Hamilton, ON, L8S 4L7</wicri:regionArea><orgName type="university">Université McMaster</orgName><placeName><settlement type="city">Hamilton (Ontario)</settlement><region type="state">Ontario</region></placeName></affiliation></author><author><name sortKey="Haapamaki, C M" sort="Haapamaki, C M" uniqKey="Haapamaki C" first="C M" last="Haapamaki">C M Haapamaki</name><affiliation wicri:level="4"><country xml:lang="fr">Canada</country><wicri:regionArea>Department of Engineering Physics, Centre for Emerging Device Technologies, McMaster University, Hamilton, ON, L8S 4L7</wicri:regionArea><orgName type="university">Université McMaster</orgName><placeName><settlement type="city">Hamilton (Ontario)</settlement><region type="state">Ontario</region></placeName></affiliation></author><author><name sortKey="Lapierre, R R" sort="Lapierre, R R" uniqKey="Lapierre R" first="R R" last="Lapierre">R R Lapierre</name><affiliation wicri:level="4"><country xml:lang="fr">Canada</country><wicri:regionArea>Department of Engineering Physics, Centre for Emerging Device Technologies, McMaster University, Hamilton, ON, L8S 4L7</wicri:regionArea><orgName type="university">Université McMaster</orgName><placeName><settlement type="city">Hamilton (Ontario)</settlement><region type="state">Ontario</region></placeName></affiliation><affiliation wicri:level="1"><country wicri:rule="url">Canada</country></affiliation></author></analytic><monogr></monogr><series><title level="j">Nanotechnology</title><idno type="ISSN">0957-4484</idno><idno type="eISSN">1361-6528</idno><imprint><publisher>IOP Publishing</publisher><date type="published" when="2012-08-10">2012-08-10</date><biblScope unit="volume">23</biblScope><biblScope unit="issue">31</biblScope></imprint><idno type="ISSN">0957-4484</idno></series><idno type="istex">7917A3A45DC7ED1623FF247FDB9E2FE832432E8B</idno><idno type="DOI">10.1088/0957-4484/23/31/315703</idno><idno type="href">http://stacks.iop.org/Nano/23/315703</idno><idno type="ArticleID">nano429191</idno></biblStruct></sourceDesc><seriesStmt><idno type="ISSN">0957-4484</idno></seriesStmt></fileDesc><profileDesc><textClass></textClass><langUsage><language ident="en">en</language></langUsage></profileDesc></teiHeader><front><div type="abstract">The effect of ammonium polysulfide solution, (NH4)2Sx, on the surface passivation of p-doped InP nanowires (NWs) was investigated by micro-photoluminescence. An improvement in photoluminescence (PL) intensity from individual NWs upon passivation was used to optimize the passivation procedure using different solvents, sulfur concentrations and durations of passivation. The optimized passivation procedure gave an average of 24 times improvement in peak PL intensity. A numerical model is presented to explain the PL improvement upon passivation in terms of a reduction in surface trap density by two orders of magnitude from 1012 to 1010cm2, corresponding to a change in surface recombination velocity from 106 to 104cms1. The diameter dependence of the PL intensity is investigated and explained by the model. The PL intensity from passivated nanowires decreased to its initial (pre-passivation) value over a period of seven days in ambient air, indicating that the S passivation was unstable.</div></front></TEI><affiliations><list><country><li>Canada</li></country><region><li>Ontario</li></region><settlement><li>Hamilton (Ontario)</li></settlement><orgName><li>Université McMaster</li></orgName></list><tree><country name="Canada"><region name="Ontario"><name sortKey="Tajik, N" sort="Tajik, N" uniqKey="Tajik N" first="N" last="Tajik">N. Tajik</name></region><name sortKey="Haapamaki, C M" sort="Haapamaki, C M" uniqKey="Haapamaki C" first="C M" last="Haapamaki">C M Haapamaki</name><name sortKey="Lapierre, R R" sort="Lapierre, R R" uniqKey="Lapierre R" first="R R" last="Lapierre">R R Lapierre</name><name sortKey="Lapierre, R R" sort="Lapierre, R R" uniqKey="Lapierre R" first="R R" last="Lapierre">R R Lapierre</name></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
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